- 您现在的位置：买卖IC网 > Sheet目录488 > NTGD3148NT1G (ON Semiconductor)MOSFET N-CH DUAL 20V 3.5A 6TSOP
NTGD3148N
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
I D = 250 m A, Ref to 25 ° C
20
12.5
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 16 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
0.5
3.28
1.5
V
mV/ ° C
Drain-to-Source On Resistance
R DS(on)
V GS = 4.5 V
V GS = 2.5 V
I D = 3.5 A
I D = 2.8 A
41.7
58
70
100
m W
Forward Transconductance
g FS
V DS = 5.0 V, I D = 3.5 A
6.2
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
RG
V GS = 0 V, f = 1.0 MHz,
V DS = 10 V
V GS = 4.5 V, V DS = 10 V,
I D = 3.5 A
300
73
44
3.8
0.3
0.7
1.1
2.8
pF
nC
W
SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Time
t d(ON)
7.4
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 10 V,
I D = 3.5 A, R G = 3.0 W
11.2
12.8
1.6
ns
DRAIN-TO-SOURCE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
I D = 0.8 A
T J = 25 ° C
T J = 125 ° C
0.71
0.57
V
Reverse Recovery Time
t RR
9.0
Charge Time
Discharge Time
Reverse Recovery Time
T a
T b
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 0.8 A
5.0
4.0
2.5
ns
nC
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTGD3148NT1G
Package
TSOP-6
Shipping ?
3000 / Tape & Reel
(Pb-Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NTGD3149CT1G
MOSFET COMPL 20V DUAL 6-TSOP
NTGD4161PT1G
MOSFET P-CH DUAL 30V 2.3A 6-TSOP
NTGD4167CT1G
MOSFET N/P-CH 30V DUAL 6-TSOP
NTGD4169FT1G
MOSFET N-CH 30V 2.6A 6-TSOP
NTGS1135PT1G
MOSFET P-CH 8V 4.6A 6-TSOP
NTGS3130NT1G
MOSFET N-CH SGL 20V 5.6A 6-TSOP
NTGS3441BT1G
MOSFET P-CH 20V 2.2A 6-TSOP
NTGS3441PT1G
MOSFET P-CH 20V 1.8A 6-TSOP
相关代理商/技术参数
NTGD3149C
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual
NTGD3149CT1G
功能描述:MOSFET COMP TSOP6 20V 3A TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGD4161P
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6
NTGD4161P_06
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6
NTGD4161PT1G
功能描述:MOSFET PFET TSOP6 20V 2.3A 160mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGD4167C
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Complementary, 30 V, +2.9/−2.2 A, TSOP−6 Dual
NTGD4167CT1G
功能描述:MOSFET COMP 30V 2.9A 0.090 TSOP6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGD4169F
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6